| PART |
Description |
Maker |
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| MR27V452D |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MR27V452DTP MR27V452D MR27V452DMP MR27V452DRP |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| AK5362048W |
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| MSM27C201CZ |
262,144-Word x 8-Bit One Time PROM(256K字位一次性可编程ROM 262,144字8位一次性可编程56K字8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
| 24C256 IS24C256 IS24C256-2G IS24C256-2GI IS24C256- |
262,144-bit 2-WIRE SERIAL CMOS EEPROM
262,144-bit 2-WIRE SERIAL CMOS EEPROM 32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
DIODE ZENER 6.2V 120MW SSSMINI2
262/144-bit2-WIRESERIALCMOSEEPROM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
ETC
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| MSM534002E |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit MASKROM
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| MSM27C402CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI electronic componets
|
| M5M44170-10S M5M44170-7S |
FAST PAGE MODE 4,194,304-BIT (262,144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模,194,304位（262,144字由16位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| A23W8308 A23W8308L A23W8308H A23W8308M |
262,144 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 262,144 x 8bit CMOS MASK ROM
|
AMIC Technology
|
